WBR13003D WBR13003D WBR13003D WBR13003D 1 / 5 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved high voltage fast-switching npn power transistor features features features features very high switching speed high voltage capability wide reverse bias soa built-in freewheeling diode general general general general description description description description this device is designed for high voltage, high speed switching characteristics required such as lighting system, switching mode power supply. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings symbol parameter test conditions value units v ces collector-emitter voltage v be = 0 700 v v ceo collector-emitter voltage i b = 0 400 v v ebo emitter-base voltage i c = 0 9.0 v i c collector current 1.5 a i cp collector pulse current 3.0 a i b base current 0.75 a i bm base peak current t p = 5ms 1.5 a p c total dissipation at tc = 25 40 w total dissipation at ta = 25 1.2 t j operation junction emperature - 40 ~ 150 t stg storage temperature - 40 ~ 150 thermal thermal thermal thermal characteristics characteristics characteristics characteristics symbol parameter value units r qjc thermal resistance, junction-to-case 3.12 /w r qja thermal resistance, junction-to-ambient 89 /w
WBR13003D WBR13003D WBR13003D WBR13003D 2 / 5 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tc (tc (tc (tc = = = = 25 25 25 25 c) c) c) c) symbol parameter test conditions value units min typ max bv c b o collector-base breakdown voltage ic=0.5ma,ie=0 700 v bv ceo collector-base breakdown voltage ic=10ma,ib=0 400 - - v v ce(sat) collector-emitter saturation voltage ic=200ma,ib=100ma - - 1.6 v v be(sat) base-emitter saturation voltage ic=200ma,ib=100ma - - 1.2 v i cbo collector-base cutoff current vcb=550v,ie=0ma - - 10 a i ceo collector-emitter cutoff current vce=400v,ib=0ma - - 20 a i ebo emitter- base cutoff current veb=9v,ic=0ma - - 20 a h fe dc current gain vce=20v,ic=20ma vce=5v, ic=1ma 10 9 - - 40 - ts tf storage time fall time v cc =250v i c =5 ib i b1 =- i b2 =0.04a - - - - 3 0.8 ? note: note: note: note: pulse test : pulse width 300, duty cycle 2%
WBR13003D WBR13003D WBR13003D WBR13003D 3 / 5 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved
WBR13003D WBR13003D WBR13003D WBR13003D 4 / 5 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved resistive resistive resistive resistive load load load load switching switching switching switching test test test test circuit circuit circuit circuit inductive inductive inductive inductive load load load load switching switching switching switching & & & & rbsoa rbsoa rbsoa rbsoa test test test test circuit circuit circuit circuit
WBR13003D WBR13003D WBR13003D WBR13003D 5 / 5 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved to-126 to-126 to-126 to-126 package package package package dimension dimension dimension dimension dim mm lnch m i n typ max m i n typ max a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 3.2 0.126
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